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李成祥


Tel:010-82544840
Email:licx@ipe.ac.cn

李成祥,男,1979年12月生,副研究员,硕士生导师。2002年毕业于哈尔滨工业大学工程力学专业,2007年获哈尔滨工业大学工学博士学位,主要从事硅锗异质结构中失配位错的演化及失配应变释放机理方面的分子模拟研究。2007年至2009年在清华大学工程力学系从事博士后研究,对碳纳米管材料轴向和横向热传导性质进行了模拟分析;对高体积分数碳纳米管/橡胶复合材料的模型及增强机理进行了研究。2010年至今在中国科学院过程工程研究所任助理研究员、副研究员。主要从事微纳米材料表界面性能模拟和介尺度结构研究;纳微尺度流动、反应和扩散耦合的多尺度模拟研究工作。主持或作为骨干人员参与了国家自然科学基金等科研项目8项;已发表论文20余篇,主要论文有(*为通讯作者)。

  1. Yangping Li, Mingcan Zhao, Chengxiang Li*, Wei Ge*, Simulation study on the reaction-diffusion coupling in simple pore structures, Langmuir, 33, 11804-11816, 2017.
  2. Yangping Li, Chenglong Zhang, Chengxiang Li*, Zhicheng Liu, Wei Ge*, Simulation of the effect of coke deposition on the diffusion of methane in zeolite ZSM-5, Chemical Engineering Journal, 320, 458-467, 2017.
  3. Chenglong Zhang, Guofei Shen, Chengxiang Li, Wei Ge*, Jinghai Li, Hard-sphere/pseudo-particle modelling (HS-PPM) for efficient and scalable molecular simulation of dilute gaseous flow and transport, Molecular Simulation, 42, 1171-1182, 2016.
  4. Chengxiang Li*, Wenlai Huang, Chaofeng Hou, Wei Ge, Multi-scale simulation of grain boundary structure effects in poly-Si thin film solar cell, International Journal of Modern Physics C, 24(7), 1350045, 2013
  5. Wenlai Huang, Wei Ge, Chengxiang Li, Chaofeng Hou, Xiaowei Wang, Xianfeng He, Atomic and electronic structures of Si[0 0 1] (1 3 0) symmetric tilt grain boundaries based on first-principles calculations, Computational Materials Science, 58,38-44, 2012
  6. The EMMS Group, Meso-scale oriented simulation towards virtual process engineering (VPE)—The EMMS Paradigm, Chemical Engineering Science, 66, 4426-4458, 2011
  7. Chengxiang Li, Yilun Liu, Xuefeng Yao, Masaei Ito, Toru Noguchi, Quanshui Zheng*, Interfacial shear strengths between carbon nanotubes, Nanotechnology, 21, 115704, 2010.
  8. Chengxiang Li*, Qingyuan Meng, Computer simulation of the vacancy defects interaction with shuffle dislocation in silicon, Superlattices and Microstructures, 45, 1-7, 2009.
  9. Cheng-xiang Li*, Qing-yuan Meng, Li-jun Yang, Kangyou Zhong, Atomistic Study of the Strength and Elastic Constants of Perfect and Defected Silicon, International Journal of Modern Physics B, 23, 2365-2371, 2009.
  10. Chengxiang Li*, Qingyuan Meng, Kangyou Zhong,Chaoying Wang, Computer Simulation of the 60o Dislocation Interaction with Vacancy Cluster in Silicon, Physical Review B 77, 045211, 2008.
  11. Cheng-xiang Li*,Qing-yuan Meng, Gen Li and Li-jun Yang,Atomistic simulation of the 60o dislocation mobility in silicon crystal,Superlattices and Microstructures, 40, 113-118,2006.


 

   

 

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